Rectangular contact used as a low voltage fuse element

ABSTRACT

A repair fuse element and method of construction are disclosed that eliminate or substantially reduce the disadvantages and problems associated with prior fuse elements. In one embodiment, the fuse element is constructed with a rectangular-shaped contact. The contact is made long enough so that it makes contact at each end with a metal layer, but design rule spacing is still maintained between the connections with the metal layer. The overlapping areas between the rectangular contact and the metal layers are asymmetrical. Alternatively, these overlapping areas are smaller than the design rule overlap requirements. In a second embodiment, a fuse element is constructed with a plurality of rectangular-shaped contacts. As a result, a current value that is significantly lower than conventional fuse current values, can be used to melt such a contact or blow the fuse.

TECHNICAL FIELD OF THE INVENTION

[0001] The present invention relates in general to the semiconductorprocessing field and, in particular, to a low voltage Fuse element andmethod of fabrication.

BACKGROUND OF THE INVENTION

[0002] Certain semiconductor devices, such as dynamic random accessmemories (DRAMs) and static RAMs (SRAMs), are designed with redundantrows and/or columns of memory bits. The redundant rows and columns canbe connected into a memory array to substitute for memory cells founddefective during the testing and inspection process. This connection canbe made by blowing selected fuses that are strategically located in thememory array and the redundant rows and columns. Typically, these fusesare made of polysilicon formed on a field oxide layer simultaneouslywith a gate electrode. Alternatively, these fuses can be made of a metalmaterial.

[0003] A significant problem experienced with conventional polysiliconfuses is that they have relatively high inherent and parasiticresistances. On the other hand, the current required to blow such apolysilicon fuse is relatively low. A significant problem experiencedwith conventional metal fuses is that they require exceedingly highcurrents to make them blow. However, the inherent resistance of suchmetal fuses is relatively low.

SUMMARY OF THE INVENTION

[0004] Accordingly, there is a need for a fuse element with low inherentresistance, which also requires a low amount of current to melt the fuseelement and make it blow.

[0005] In accordance with the present invention, a fuse element andmethod of construction are provided that eliminate or substantiallyreduce the disadvantages and problems associated with prior fuseelements.

[0006] In one embodiment of the present invention, a fuse element isconstructed with a rectangular-shaped contact. The contact is made longenough so that it makes contact at each end with a metal layer, butdesign rule spacing is still maintained between the connections with themetal layer. In this embodiment, a polysilicon plate under the fuseelement is primarily to land the contacts and does not carry any of thefusing current. In one aspect, the overlapping areas between therectangular contact and the metal layers are selected to beasymmetrical. Alternatively, in another aspect, one or more of theseoverlapping areas is selected to be smaller than the design rule overlaprequirements.

[0007] In a second embodiment of the present invention, a fuse elementis constructed with a plurality of rectangular-shaped contacts. In thiscase, to overlapping areas of the metal layer and contacts are selectedto be asymmetrical. In this embodiment, the polysilicon supports thefusing element, but is not the fusing element.

[0008] An important technical advantage of the present invention is thata fuse element is provided which has significantly lower inherentresistance and parasitic resistance than prior polysilicon fuses.

[0009] Another important technical advantage of the present invention isthat a fuse element is provided which requires a significantly loweramount of current to blow than prior metal fuses.

[0010] Still another important technical advantage of the presentinvention is that a fuse element is provided which requires asignificantly lower blow voltage than that used for prior fuses.

[0011] Yet another important technical advantage of the presentinvention is that a fuse element is provided with a small overlap areabetween a contact and a metal layer, which can generate very highinterfacial current densities in a relatively compact layout.

[0012] Other technical advantages of the present invention will bereadily apparent to one skilled in the art from the following figures,description and claims.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] For a more complete understanding of the present invention andits advantages, reference is now made to the following descriptions,taken in conjunction with the accompanying drawings, in which:

[0014]FIG. 1A is a cross-sectional view of a fuse element constructed inaccordance with an embodiment of the present invention;

[0015]FIG. 1B is a perspective view of the fuse element shown in FIG.1A;

[0016]FIG. 2A is a cross-sectional view of a fuse element constructed inaccordance with a second embodiment of the present invention; and

[0017]FIG. 2B is a perspective view of the fuse element shown in FIG.2A.

DETAILED DESCRIPTION OF THE DRAWINGS

[0018] The preferred embodiments of the present invention and itsadvantages are best understood by referring to FIGS. 1A-2B of thedrawings, like numerals being used for like and corresponding parts ofthe various drawings.

[0019]FIG. 1A is a cross-sectional view of a fuse element constructed inaccordance with an embodiment of the present invention. FIG. 1B is aperspective view of the fuse element shown in FIG. 1A. Referring toFIGS. 1A and 1B, a fuse element 10 is shown. For example, fuse element10 can be strategically located in a DRAM or SRAM memory array and/or inredundant columns and: rows. As such, fuse element 10 can be located inany appropriate semiconductor device that incorporates electrical fusesfor memory or circuitry repair.

[0020] Fuse element 10 includes a substantially rectangular-shapedcontact 12. For this exemplary embodiment, the contact 12 is formed on apolysilicon layer or landing pad 14. The contact 12 is formed by fillingthe contact area with tungsten. A lead wire (not shown) connected to thecontact 12 can be copper with a tantalum nitride liner. The lead wirecan carry a current used to melt or blow the fuse.

[0021] A first metal line 16 and second metal line 18 of a metal layer,MET1, each overlay respective end of the contact 12. For example, themetal layer, MET1, can form a first layer of a multi-level metal stackin a multi-metal level semiconductor device. Typically, such a stack caninclude a plurality of levels of metal and inter-level oxide ordielectric layers.

[0022] Referring to FIG. 1A, for this exemplary embodiment, thedimensions of the rectangular contact surface 12(a) (facing upwards inFIG. 1B) of contact 12 are 0.15 μm by 0.525 μm. It is to be understoodthat the thickness dimension of the contact 12 (distance between MET-1layer and polysilicon layer) is not significantly related to thefunction of the present invention and can be determined by conventionaldesign rules. Preferably, the minimum distance or spacing 15 between thefirst metal line 16 and the second metal line 18 of the metal layer,MET1, is 0.175 μm. However, for this embodiment, this distance orspacing 15 between the metal lines 16, 18 is selected to be 0.365 μm.

[0023] According to design rules for the fuse element 10 configurationshown in FIGS. 1A and 1B, each of the lengths 11 and 13 by which therespective metal lines 16 and 18 overlap the contact surface 12(a) is0.05 μm. Preferably, however, for this embodiment, the overlapdimensions 11 and 13 are each selected to be 0.08 μm long. Using thisoverlap value of approximately 0.08 μm ensures that each of theoverlapping areas is large enough so that an open contact is not formed(e.g., at T0).

[0024] Preferably, the minimum thickness of the metal layer, MET1, is2,500 Angstroms. As such, the J_(rms) limit for the metal layer, MET1,is 2.5E6 A/cm². If the metal line (16 or 18) to contact surface 12(a)overlap is 0.05 μm, the width 19 of the metal layer, MT1, is 0.25 μm.Moreover, the average current, I_(rms) of the metal layer, MT1, is 1.53mA. Thus, the current density at a metal line 16, 18 to contact 12overlap is 12.75E6 A/cm², 5.1×width of the lead (not shown). The widthof the lead can be increased in order to increase the I_(rms) value forthe metal layer, MT1.

[0025] In operation, the fuse element 10 can be used, for example, as anelectrically programmable fuse. The contact 12 can be connected to afloating polysilicon element of a memory array and/or redundant rows andcolumns. In order to blow the fuse 10, a current is conveyed through thebody of the contact 12 between the two MET1 lines 16, 18. If the metalline 16, 18 to contact 12 overlaps are selected to be asymmetrical(e.g., the overlap of metal line 16 to contact 12 is smaller than theoverlap of metal line 18 to contact 12, or vice versa), then a currentvalue which is significantly lower than conventional fuse currentvalues, can be used to melt the MET1-CONT interface (16/12) and blow thefuse. Alternatively, if either of the metal line 16, 18 to contact 12overlap dimensions is selected to be smaller than the design ruleoverlap dimension for such a fuse element configuration (e.g., theoverlap of metal line 16 to contact 12 is smaller than the design rulefor a metal line to contact overlap), then a current value which issignificantly lower than conventional fuse current values, can be usedto melt the MET1-CONT inter,ace (16/12) and blow the fuse. Consequently,a significant additional advantage of the present invention is that alow voltage supply can be used to melt or blow such a fuse.

[0026]FIG. 2A is a cross-sectional view of a fuse element constructed inaccordance with a second embodiment of the present invention. FIG. 2B isa perspective view of the fuse element shown in FIG. 2A. Referring toFIGS. 2A and 2B, a fuse element 20 is shown. Fuse element 20 includes aplurality of substantially rectangular-shaped contacts 22(a) and 22(b).For this exemplary embodiment, the contacts 22(a) and 22(b) are formedon a polysilicon layer or landing pad 24. The contacts 22(a) and 22(b)can be formed by filling the contact areas with tungsten. A lead wire(not shown) connected to a contact 22(a) and/or 22(b) can be copper witha tantalum nitride liner. The lead wire can carry a current used to meltor blow the fuse.

[0027] A first metal line 26 and second metal line 28 of a metal layer,MET1, each overlay a surface of a respective contact 22(a) and 22(b).Preferably, for this embodiment, the overlap dimensions 21 and 23 areeach selected to be 0.08 μm. Using this overlap value of approximately0.08 μm ensures that each of the overlapping areas is large enough sothat an open contact is not formed (e.g., at T0). The width of thecontact 22(a) can be 0.08 μm, because the contact surface of contact,22(a) is substantially square. The width of the contact 22(b) can be0.15 μm, which is similar to the width of contact 12 shown in FIGS. 1Aand 1B.

[0028] Preferably, the minimum thickness of the metal layer, MET1, is2,500 Angstroms. As such, the J_(rms) limit for the metal layer, MET1,is 2.5E6 A/cm². If the metal line 26 to contact surface 22(a) overlap is0.05 μm, the width 29 of the metal layer, MT1, is 0.25 μm. Moreover, theaverage current, I_(rms), of the metal layer, MT1, is 1.53 mA. Thus, thecurrent density at the metal line 26 to contact 22(a) overlap is 12.75E6A/cm², 5.1×width of the lead (not shown). As such, the width of the leadcan be increased in order to increase the I_(rms) value for the metallayer, MT1. The operation of the second embodiment is essentiallysimilar to that of the first embodiment described above. However, forthe second embodiment, since the overlapping surfaces of the metal lines26, 28 to the contacts 22(a), 22(b), respectively, are asymmetrical,then a current value which is significantly lower than conventional fusecurrent values, can be used to melt the MET1-CONT interface (26/22(a))and blow the fuse.

[0029] Although a preferred embodiment of the method and apparatus ofthe present invention has been illustrated in the accompanying Drawingsand described in the foregoing Detailed Description, it will beunderstood that the invention is not limited to the embodimentdisclosed, but is capable of numerous rearrangements, modifications andsubstitutions without departing from the spirit of the invention as setforth and defined by the following claims.

What is claimed is:
 1. A fuse element for a semiconductor device,comprising: at least one substantially rectangular contact; apolysilicon layer formed in said semiconductor device, a first surfaceof said at least one substantially rectangular contact formed on asurface of said polysilicon layer; and a plurality of metal lines formedfrom at least one metal layer in said semiconductor device, each line ofsaid plurality of metal lines formed to overlap a respective area of asecond surface of said at least one substantially rectangular contact.2. The fuse element of claim 1, wherein said plurality of metal linescomprises two metal lines, and whereby a first metal line of said twometal lines is formed to overlap a first area of said second surface ofa second metal line of said two metal lines is formed overlap a secondarea of said second surface of said at least one substantiallyrectangular contact, said first area being smaller than said secondarea.
 3. The fuse element of claim 1, wherein said plurality of metallines comprises two metal lines, and whereby a first metal line of saidtwo metal lines is formed to overlap a first portion of said secondsurface of said at least one substantially rectangular contact by afirst predetermined distance, and a second metal line of said two metallines is formed to overlap a second portion of said second surface ofsaid at least one substantially rectangular contact by a secondpredetermined distance.
 4. The fuse element of claim 3, wherein saidfirst predetermined distance is less than said second predetermineddistance.
 5. The fuse element of claim 3, wherein at least one distanceof said first distance and said second distance approximately 0.08 μm.6. The fuse element of claim 1, wherein said at least one substantiallyrectangular contact comprises tungsten material.
 7. The fuse element ofclaim 1, wherein said a least one substantially rectangular contactfurther comprises a first contact and a second contact.
 8. The fuseelement of claim 7, wherein said plurality of metal lines comprises twometal lines, and whereby a first metal line of said two metal lines isformed to overlap a surface area of said first contact, and a secondmetal line of said two metal lines is formed to overlap a surface areaof said second contact, said surface area of said first contact beingsmaller than said surface area of said second contact.
 9. A method forfabricating a fuse element for a semiconductor device, comprising thesteps of: forming at least one substantially rectangular contact;forming a polysilicon layer in said semiconductor device; forming afirst surface of said at least one substantially rectangular contact ona surface of said polysilicon layer; and forming a plurality of metallines from at least one metal layer in said semiconductor device, eachline of said plurality of metal lines overlapping a respective area of asecond surface of said at least one substantially rectangular contact.10. The method of claim 9, wherein said plurality or metal linescomprises two metal lines, said method further comprising the steps of:forming a first metal line of said two metal lines to overlap a firstarea of said second surface of said at least one substantiallyrectangular contact; and forming a second metal line of said two metallines to overlap a second area of said second surface of said at leastone substantially rectangular contact, said first area being smallerthan said second area.
 11. The method of claim 9, wherein said pluralityof metal lines comprises two metal lines, said method further comprisingthe steps of: forming a first metal line of said two metal lines tooverlap a first portion of said second surface of said at least onesubstantially rectangular contact by a first predetermined distance; andforming a second metal line of said two metal lines to overlap a secondportion of said second surface of said at least one substantiallyrectangular contact by a second predetermined distance.
 12. The methodof claim 11, wherein said first predetermined distance is less than saidsecond predetermined distance.
 13. The method of claim 11, wherein atleast one distance of said first distance and said second distance isapproximately 0.08 μm.
 14. The method of claim 1, wherein said at leastone substantially rectangular contact comprises a tungsten material. 15.The method of claim 9, wherein said at least one substantiallyrectangular contact further comprises a first contact and a secondcontact.
 16. The method of claim 15, wherein said plurality of metallines comprises two metal lines, said method further comprising thesteps of: forming a first metal line of said two metal lines to overlapa surface area of said first contact; and forming a second metal line ofsaid two metal lines to overlap a surface area of said second contact,said surface area of said first contact being smaller than said surfacearea of said second contact.